Flow-Based Computing of NOR Logic Using ReRAM Devices

In this work, we characterized the electrical performance and the potential for in-memory logic computation of resistive random-access memory (ReRAM) cells fabricated on a 300 mm wafer platform. The typical set and reset voltages of the ReRAM cells were 0.86 V and −0.63 V respectively, and the mean memory window was 8X (HRS:LRS). A flow-based computing technique was used to implement a NOR logic operation in a 3$\times3$ array of 1 transistor – 1 ReRAM (1T1R) cells. Both endurance and retention measurements were performed and the effect of variability in the high resistance state on the operation of the NOR logic was evaluated.