Dual-Band CMOS Down-Conversion Mixer Adopting Band-Switchable Transformer

In this brief, a dual-band complementary metal–oxide–semiconductor (CMOS) down-conversion mixer is presented, which supports the fifth-generation new radio frequency bands of 26–30 GHz and 37–40 GHz. In the proposed design, the transformer-based inductance adjustment techniques are utilized to handle dual-band radio frequency and local oscillator (LO) signals for performance optimization. The proposed design is fabricated using a 65-nm CMOS process. With an identical LO power of +5 dBm, the implemented down-conversion mixer attains conversion gains of 7.1 dB and 5.1 dB, noise figures of 9.6 dB and 11.4 dB, input 1-dB compression points of–14.7 dBm and–11 dBm, and input third-order intercept points of–5.1 dBm and–1.95 dBm for 28 and 39 GHz frequency bands, respectively. The implemented design consumes the current of 6.2 mA with a 1-V supply.