Defect-less trench filling of epitaxial Si growth by H/sub 2/ annealing

A new trench filling epitaxial Si growth process is proposed for the high aspect ratio doped region. Pre-H/sub 2/-annealing treatment before filling epitaxial growth realizes the prevention of the crystal defects in the filling epitaxial layer. After filling epitaxial growth, the sequential processes, i.e., HCl etching, refilling epitaxial growth and post-H/sub 2/-annealing, make a trench filling. The fabricated doped region has a high aspect shape (width: 3.0 /spl mu/m, depth: 32 /spl mu/m, aspect ratio: 10.7), which has been investigated by the cross-sectional SCM observation.