Atomic Layer Deposition of Perpendicularly Magnetized Co Layers Showing Current-Induced Domain Wall Motion

Successful preparation of perpendicularly magnetized Co thin layers on Pt seed-layers (SLs) using atomic layer deposition (ALD) technique with Co(PF3)4H as a precursor is reported. The residual phosphorus content in the samples, due to low deposition temperatures to realize ALD, was reduced effectively by tuning ALD parameters. Spin–orbit-torque-driven current-induced domain wall motion (CIDWM) was observed in the strip containing ALD Co layer prepared with the low phosphorus condition.