Performance Analysis of InGaSb OEIC Receiver

In terms of technology, there are a lot of barriers standing in the way of a fully realized optoelectronic integrated circuit (OEIC). When it comes to OEIC receivers (OEICR), the largest issue facing engineers and designers is integrating established photo-diodes such (p-i-n, avalanche photo-diode (APD)) with a pre-amplifier based on HBT or heterojunction field transistors. It has been suggested to use a mid-infrared wavelength region InGaSb p-i-n avalanche photodiode as the basis for a highly sensitive optical receiver (OR), which would then be followed by a transimpedance (TI) pre-amplifier based on InGaSb HBTs. The p-i-n-low APD's excess-noise component lowers the amount of the lowest detectable optical power and raises the receiver's responsiveness. A theoretical examination of the suggested detector has already been completed. According to the findings, the component offers a maximum TI gain (60 dB-ohm) and a bandwidth of 14 GHz for a photo-detector capacitance of 20 fF. This is the case even if the charge capacity of the photo-detector is just 20 fF. It has been discovered that the receiver has a responsiveness that is (−44.02 dBm). Through implementing the research presented here, the receiver's performance may be improved in terms of TI gain, frequency band, and responsiveness.