Plasmonic Spectrum and Resonance of Grating-gate GaN/AlGaN HEMTs

In this work, the plasmonic spectrum and resonance of grating-gate GaN/AlGaN high electron mobility transistors (HEMTs) are studied. The energy bands of the plasmonic crystal in the HEMT are simulated and compared with the theoretical formula. The THz transmission and absorption spectra of the plasmonic crystal under different temperatures are simulated. The spatial dependences of the plasma wave in the two-dimensional electron gas at different resonant modes are analyzed. It is found that the excitation of plasma oscillation in ungated region could improve the THz absorption of plasmonic crystal.