Some Studies on Resistive-Wall Amplifier in a Silicon Carbide Coated Resistive Wall

Resistive-wall amplifier is a promising vacuum electronic device, and thin-films based on silicon carbide can be considered as the resistive wall. The band structure, conductivity and dielectric function of 3C-SiC are studied by first-principle calculation and the Boltzmann transport equation. The gain is studied in the case of small signals for further research.