Semimetallic Atomic Layer Deposited TiS2 Thin Films for Contact Resistance Improvement of MoS2-based Thin Film Transistor

We introduced atomic layer deposition (ALD) of TiS
2
as contact layer for MoS
2
TFT to reduce the contact resistance. In this study, film properties of low temperature ALD TiS
2
according to growth temperature was analyzed. ALD grown TiS
2
showed semimetallic nature with low resistivity. In addition, change in properties of MoS
2
after TiS
2
deposition was investigated by various method. By applying ALD TiS
2
, we found significant increase in current level and V
th
reduction which are attributed to semimetal nature of TiS
2
. These results imply that ALD TiS
2
for contact formation is proper method to achieve high performance of MoS
2
TFT.