Area-Selective Atomic Layer Deposition of Ruthenium Thin Films by Chemo-Selective Adsorption of Short Alkylating Agents

As advanced semiconductor devices went into the extremely narrow dimensions, ruthenium has received great deal of attention for next-generation gate electrodes and metal interconnects. Accordingly, area-selective atomic layer deposition (AS-ALD) of Ru films is essentially required. In this work, we report effects of surface modification treated with vapor dosing of (N,N-diethylamino)trimethylsilane (DEATMS) as small alkylating agents on technologically important substrates of Si, SiO
2
, SiN, TiN, and W against Ru ALD. Through enhanced adsorption of DEATMS with discrete feeding method (DFM), significant growth retardation against Ru ALD was selectively found on SiO
2
, SiN, and TiN in contrast to Si-H and W.