Extended 0.13 /spl mu/m CMOS technology for the ultra high-speed and MS/RF application segments

This paper introduces new technology features to support ultra high-speed and MS/RF applications incorporated into a leading-edge fully manufacturable 0.13 /spl mu/m CMOS foundry technology (K.K. Young et al, IEDM Tech Digest, pp. 563-566, 2000). New core devices with 15.5 /spl Aring/ and nominal 75 nm physical gate lengths support at least 10% performance improvement with respect to prior release. These devices offer the best I/sub off/-I/sub dsat/ performance reported so far for 1.2 V applications. To support high-speed I/O standards, additional 1.8 V-32 /spl Aring/ I/O devices are integrated with the 15.5 /spl Aring/ transistors. Leading-edge passive elements for MS/RF applications are reported in this work. Advanced Cu/low-k back end process integration that can support up to nine layers of metal is also demonstrated.