High-Voltage Analog Switch Inspired by Stacked MOSFET-Based RF Switches

A biasing concept for a stacked MOSFET-based RF switch enabling high DC voltage handling is proposed, making the device suitable for analog switching applications. The biasing network is based on floating bipolar voltage sources generating gate bias voltages for individual transistors in stack in accordance with the applied DC signal. A 10-stack, 2.32
$\boldsymbol{\Omega }$
shunt switch implemented in a 65nm SOI-CMOS switch process demonstrates 0.1 dB bandwidth of 3 GHz with DC voltage handling ranging between–7V and +17V and RF power handling capabilities of 26 dBm at 900 MHz in OFF-state.