Vertically Extended Channel Architecture for Implementing a Photolithographically Scalable Thin-Film Transistor

We present a prototype of photolithographically patternable thin-film transistor (TFT) architecture using vertically extended channel (VEC) for ultrahigh-resolution (UHR) display applications such as augmented reality and virtual reality (AR/VR) devices. Implementing UHR displays requires a unit pixel size of a few micrometers in pitch, so TFT footprints should be smaller than those of conventional planar structures, while retaining the appropriate on-current level and mobility. The proposed device has a small footprint of 4.5
$\text{F}^{\mathbf {{2}}}$
compared to other TFT structures and can achieve higher mobility and on-current by increasing VEC thickness without changing any device channel feature size and footprint. The presented VEC TFT showed high saturation mobility of 22.4 cm
$^{\mathbf {{2}}}/\text{V}\cdot \text{s}$
and a linear increase in output characteristics as a function of VEC thickness variation. Furthermore, we demonstrated the back-end-of-line (BEOL) competitiveness of this device structure through the electrical parameter comparison among the planar TFT device structures, which were fabricated with a similar channel dimension.