Numerical Simulation of FAPbI3 perovskite based solar cells with graphene oxide as hole transport layer using SCAPS-1D

In the present paper, we have realized a solar cell based on the perovskite formamidinium lead halide material FAPbI3. Using the SCAPS-1D simulator, we have calculated the various parameters of the cell such as open circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF) and power conversion efficiency (PCE). The electrical properties of the FAPbI3 active layer were calculated. The effect of FAPbI
3
layer thickness, series and shunt resistances on photovoltaic parameters and the temperature on the solar cell (n-FTO/ n-Ti02/p-FAPbI3/p-GO (HTL)) were evaluated. Our simulation study on the FAPbI3 perovskite solar cell, allowed us to find the following values (Voc = 0.79 V, Jsc = 26.53 mA.cm-
²
, FF = 78.31 %, PCE = 16.55%). Our results are in good agreement with published experimental values and also simulated by SCAPS-1D. The presence of graphene oxide as a hole transport layer, allows the FAPbI3 cell a maximum energy conversion, according to simulation data.