3–6 Ghz Broadband High-efficiency Power Amplifier For Multi-standard Wireless Communication Systems

This paper presents a design methodology for broadband, high-efficiency power amplifiers, suitable for octave bandwidth. Based on model-based de-embedding of the parasitics associated with packaged GaN-HEMT devices. To construct the input/output matching networks, and depending on the nodal quality factor, the parasitics are fully/partially absorbed in the matching networks, while the excess reactance is resonated out. To verify the proposed approach, a 7-W 3–6 GHz power amplifier is designed and implemented. An average drain efficiency and gain of 50% and 11-dB are achieved, respectively, across the operation bandwidth.