Influence of White Light on the Photoelectric Characteristics of UV Detectors Based on β-Ga2O3

In this report, we consider the effect of radiation with radiation energy below the
$\beta $
-Ga
₂
O
₃
band-gap on the photoelectric characteristics of ultraviolet (UV) radiation detectors based on gallium oxide thin films. The gallium oxide film was deposited by radio frequency magnetron sputtering. Interdigital Ti/V electrodes were formed with an inter-electrode distance
${d}$
=
$30 \mu \text{m}$
. The structures exhibit high values of photocurrent under irradiation with a wavelength of
$\lambda $
= 254 nm and intensity of
$780 \mu \text{W}$
/cm
²
. The detectors exhibit persistent photoconductivity after exposure to UV radiation. The presence of persistent conductivity is explained by the high concentration of traps in the Ga
₂
O
₃
film and their recharging under UV irradiation. Radiation with an energy quantum below the
$\beta $
-Ga
₂
O
₃
band-gap changes the charge state of trap centers in a gallium oxide film. This effect leads to an increase in photocurrent under UV exposure and increases the stability of detectors.