Significant Performance Enhancement in strained channel GaAs Gate-All-Around (GAA) nanowire

The present research work elucidates the impact of uni-axial and bi-axial strain on the device’s transmission density, current density, 1-D & 3-D electron density, Ion/off ratio, sub-threshold swing and peak channel current on a GaAs GAA FET device’s performance. Furthermore, simulation performed by solving the coupled Schrödinger- Poisson in self consistent manner has also been considered. The experimental as well as computational investigation clearly demonstrate enhancement in the transmission density, current density and the 1-D & 3-D electron density in the presence of uni-axial strain. In contrast, bi-axial strain exhibits low or in-significant results as compared to uni-axial stain. On scaling down the channel length, an upsurge in the I
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and a diminishing pattern in sub-threshold swing in the case of strained devices. The Ion/off ratio of the device under strain doesn’t alters significantly, however, for unstrained device it falls sharply with the channel length scaling. Moreover, short channel devices the GaAs circular nanowire MOSFETs perform better under the uni-axial strain.