Copper damascene interconnects for the 65 nm technology node: a first look at the reliability properties

Copper interconnects with end-of-roadmap feature sizes, fabricated in damascene technology, were electrically and thermally stressed to assess reliability performance. The maximum current carrying capability of 63 nm wide copper wires was found to be a factor of 2 higher when compared with current technologies. The impact of the Cu seed layer thickness on activation energy and stress voiding is discussed. The first lifetime estimations, assuming the ITRS roadmap requirements, were also made.