Analysis of Kink Effect in Short-Channel Floating Body PD-SOI MOSFETs

The origin of a greater decrease in kink drain voltage
$V_{kink}$
in floating body PD-SOI MOSFETs with gate lengths shorter than
$0.35 ~\mu m$
is newly revealed. The
$V_{kink}$
formula as a function of the internal body voltage and
$I_{DS}$
is derived by combining the modified impact ionization multiplication factor with the body-source junction I-V equation. The parameters in this formula are extracted from the measured data of
$I_{B}$
vs.
$V_{BS}$
and
${- I}_{B}/I_{DS}$
vs.
$V_{DS}$
in the body contacted devices. By calculating the formula using the extracted parameters, it is newly found that a decrease of the drain-source saturation voltage at a shorter channel is a primary cause for the short-channel effect on
$V_{kink}$
reduction.