Design Comparing of Monolithic Integrated Circuit a Single-Stage Transistor Amplifier with Integrated Power Limiter

This article is devoted to the analysis of the results of the development and measurement of a monolithic integrated circuit of a single-stage amplifier with an input power limiter operating at an input power of no more than 35 dBm. The design of device with a power limiter included in the integrated circuit makes it possible to reduce the amplitude of the input signal, thereby eliminating the failure of devices following it due to high input power. These results make it possible to evaluate the difference in parameters in the manufacture of a microcircuit in order to propose a solution in terms of correcting the values of the elements of the electrical circuit. The device was developed in the frequency range from 14-14.6 GHz with a gain of at least 10 dB, input and output return loss of at least 10 dB, and an output power of at least 19 dBm. In this work, a 0.25 µm process, GaAs, pHEMT was used.