Experimental Demonstration of Point-Injection Trench IGBT Concept

The point injection trench IGBT is a promising concept based on the narrowing of the mesa between active gate trenches. In this paper, multiple design variations of the point injection trench IGBT with a voltage rating of 1200 V are fabricated and experimentally investigated. It is shown that sub micron mesa widths are successfully processed and a broad design space of IGBT devices with competitive performance is spanned.