An Electro-Thermal Co-Designed Ga2O3[100] Trench Power Diode Featuring Ferroelectric Dielectric

One major roadblock toward the maturation of Ga
2
O
3
technology is device overheating. For Ga
2
O
3
trench devices, although with the higher thermal conductivity (k
T[010]
) of [100] trench sidewall compared to [010] trench sidewall, the Ga
2
O
3
trench devices with [100] trench are rarely adopted, due to the worst sidewall interface quality induced by sidewall-orientation-dependent etch damage, even after the wet etch repair using acids. For the first time, the proposed electro-thermal co-designed Ga
2
O
3
[100] trench diode based on optimized trench sidewall interface quality, featuring ferroelectric dielectric, exhibits better performance compared with Ga
2
O
3
[010] trench diode. Under the identical power consumption, the Ga
2
O
3
[100] trench diode shows the lowest center junction temperature, which is 9 degree lower than that of Ga
2
O
3
[010] trench diode. The new interface-quality optimization strategy can significantly provide potential for electro-thermal optimization of Ga
2
O
3
trench devices.