SONOS Embedded Flash IP Using Trap-Depth-Controlled SiN Film Enabling Data Retention more than 10 years at 200°C

We introduce a cost-effective, reliable and energy-efficient embedded-flash memory IP for IoT, industry, and automotive. A Silicon-Oxide-Nitride-Oxide-Silicon (SONOS)type memory is embedded on 130BCD+ process platform with only three additional mask steps. Performance including qualification has been checked as expected at TSMC. By applying trapdepth-controlled SiN film to the SONOS memory, data storage more than 10 years at 200
^o
C is achieved.