High-power high-efficiency superluminescent diodes with J-shaped ridge waveguide structure

In order to improve the L-I characteristics of conventional SLDs, a new ridge waveguide structure has been proposed and fabricated. As results, considerably improved light emission threshold characteristics (Ith/spl sim/30mA), a COD (catastrophic optical damage) level limited output power with high slope efficiency /spl sim/0.6W/A, and fairly improved output linearity have been obtained on the J-shaped ridge waveguide SLD by using aluminum-free materials (InGaAs/InGaAsP/InGaP).