Simulation of IGBT switch transient analysis model considering parasitic parameters

The voltage change rate and current change rate of the insulated gate bipolar transistor (IGBT) in the switching transient produce large induced voltage and induced current on the parasitic parameters of the device, which makes the IGBT very sensitive to the parasitic parameters during the switching process. In order to evaluate the influence of parasitic parameters of main circuit and package on the characteristics of IGBT switch, a transient analysis model of IGBT switch considering the influence of parasitic parameters is proposed. Detailed modeling and analysis are carried out for each stage of device turn-on and turn-off process, mathematical equations of voltage and current at each stage are established, and the change rate of voltage and current at different stages is calculated. Based on the mathematical equation between parasitic parameters and voltage and current, the influence of parasitic parameters on IGBT switching characteristics at each stage of the turn-on and turn-off process is analyzed. Finally, the influence rule of parasitic parameters on IGBT switching characteristics is verified by simulation.