A 0.5-V 0.88-mW Low Noise Amplifier With Active and Passive Gm Enhancements in Sub-6 GHz Band

This letter presents a sub-1 V low-noise amplifier (LNA) with active and passive
$G_{m}$
enhancements for low-power applications in the sub-6 GHz band. By using an enhanced folded cascode structure with
$G_{m}$
-boosting techniques at the common-gate (CG) stage, the proposed LNA achieves high gain and low noise with low power consumption. Implemented in GlobalFoundries
$0.18 \mu \text{m}$
CMOS process, the proposed LNA with a core area of 0.42 mm
²
presents a power gain of 14.5 dB at 5.8 GHz and a minimum noise figure of 3.2 dB. The LNA consumes a total dc power of 0.88 mW from a supply voltage of 0.5 V.