Impact of Doping Variation on the Performance of Sb2S3 based Solar Cell using Device Simulations

Antimony sulphide (S$\mathrm{b}_{2}\mathrm{S}_{3}$) is a promising material used as photovoltaic (PV) absorber for high PV performance owing to non-toxicity. However, the device performance is still limited by unoptimized doping density in S$\mathrm{b}_{2}\mathrm{S}_{3}$ absorber. Therefore, in this work, SCAPS-ID tool is used to design the $\mathrm{S}\mathrm{b}_{2}\mathrm{S}_{3}$ based PV device. The effect of different acceptor doping variation (NA) from 10
¹⁰
to 10
¹⁹
c$\mathrm{m}^{-3}$ has been studied and analyzed. The proposed device structure, which has been designed using device simulations, consists of several layers, namely ITO, ZnO, Zn(O,S):N, SnO
2
, and S$\mathrm{b}_{2}\mathrm{S}_{3}$. This multilayered structure has been carefully constructed with the intention of improving the device’s performance and efficiency. After doing the variation, the device performance is optimized at 10
^1S
c$\mathrm{m}^{-3}$ and achieved higher PV parameters: Jsc of 14. 1SmA/cm
²
, Voc of 1.1 V, FF of 76.41% and PCE of 10.S9%. The obtained results of this whole study provide new vision for the development of device.