Sub-threshold Swing Analysis for NC-TFET in Low-Power Biomedical Applications

In the 21
^st
century as the technology became more and more advanced the demand for the low power devices is increased. The need for high package density for better performance of device and less power consumption can be achieved. The researchers can achieve this by reducing the sub threshold swing (SS) which is limited to 60 mv/dec. Field effect transistors with steep-sub-threshold swing have the potential to lower supply voltage, making them a promising contender for very energy-efficient circuits and systems in the future. The main trade-off is the ambipolar behavior, low on-state current and high miller capacitance of TFETs. When Germanium is used as the source material instead of silicon, a heterojunction forms at source channel junction, and as a effect, an improvised outcome is produced in terms of a steeper subthreshold slope and a lower ION/IOFF ratio. This study analyses transfer properties of negative capacitance tunnel field effect transistors with Si-Source and Ge-Source (NCTFET). Electrical noise analysis and additional AC DC analysis are performed. In this paper, combining these two theories together the recent progress of NC - TFET is discussed.