Realization of Logic Performance using Double Gate TFET (DG-TFET) and Ge source DG-TFET (s-Ge-TFET)

In this paper, two different TFET architectures like double gate TFET (DG-TFET) and Ge source DG-TFET (s-Ge DG-TFET) are designed at both n and p mode using Visual TCAD simulator. A comparative study in terms of input characteristic, ON state current, OFF state current, and energy band diagram (ON and OFF states) are highlighted between these devices. The Ge source results in improvement in BTBT rate and thus, it indicates to enhancement in ON current. Furthermore, we have implemented inverter, two input NAND, and NOR logic gates using these DG-TFETs. The propagation delay and energy are extracted for these logic gates and low propagation delay as well as high energy are achieved in s-Ge DG-TFET than DG-TFET.