Phase Transition Material Modulated Hyper FET for Digital Applications

In this paper, a Phase Transition Material Modulated Hyper-FET has been proposed for Digital Applications. It has been examined by implementing a Spice model of Phase Transition Material with the source of 32nm MOSFET and later a comparison is drawn with 32nm MOSFET. In our proposed device, ISO-IOFF transfer characteristics and Output Characteristics of 32nm HyperFET reveal approximately 104 times higher ON current. The metallic resistivity, insulating resistivity, insulating to metallic current density, metallic to insulating current density, and geometry of Phase Transition Material are varied to study the effect on transfer characteristics of Hyper-FET in order to optimize the parameters for proper operation of the device.