Efficiency Enhancement in GaAs Ultra-Thin Solar Cell Using Anti-Reflection Coating

III-V Nanostructures have shown exceptional results in the field of optoelectronic devices; thanks to their excellent material properties like efficient charge mobility, high optical absorption, adaptability, and recycling of photons. However the large scale usage of III-V devices is still limited due to their high material processing cost and complex fabrication methodologies. Therefore, in this paper, we have proposed a simple yet effective design for GaAs thin-film solar cells (SCs) where by incorporating the front (oxide) and back (metal) reflectors, photogeneration in the active layer is enhanced. The optoelectronic simulation results of the proposed device have shown that it can achieve a remarkable power conversion efficiency (PCE) of 21%.