Impact of Doping and Temperature on Mobility in Single and Dual Core S/D GAA FinFETs

This article proposes a detailed investigation of the dependence of mobility on source(S)/ drain(D) doping concentrations, and temperature in Single Core Gate-AllAround (SC GAA) and Dual Core Gate-All-Around (DC GAA) FinFETs. Four cases of mobility models are considered in the technology computer-aided design (TCAD) simulations. For simpler mobility models like the Masetti model and the Philips Unified Mobility models, the primitive Constant Mobility model is taken as the reference model for computing the drain current sensitivity. For devices where simultaneous presence of (a) Philips Unified mobility model, (b) high-field saturation and (c) mobility degradation (E-normal) model is considered, the devices with simultaneous presence of (a) high-field saturation and (b) mobility degradation (E-normal) models are taken as reference. The sensitivity parameter reveals important conclusions regarding the choice of mobility models.