Write Driver for Low Power Consumption in Magnetic Tunnel Junction (MTJ) Circuits

Magnetic tunneljunction (MTJ) circuits play major role in various memory applications. Read and write operations are the basic operations required for any memory. Spin transfer torque is considered for the MTJ with a supply voltage of 1.3 volts. Read and write operations are analyzed with the proposed write driver which has 49 transistors is designed in CMOS cadence technology. Write detector, enable circuits help in achieving low power consumption at the expense of area. Hence, a trade off between power and area is possible with the proposed write driver for MTJ circuits.