Design of High-RA STT-MRAM for Future Energy-Efficient In-Memory Computing

In contrast to the low-RA STT-MRAM for memory applications, high-RA
$(> 500\ \Omega-\mu\mathrm{m}^{2})$
STT-MRAM with high cell resistance (
$1\ \mathrm{M}\Omega$
) is required to support energy-efficient in-memory computing beyond 10 POPS/W. Scaling the coercive magnetic field and cell dimension and increasing the MgO thickness are found critical for enlarging RA and write margin.