Fabrication of Low-Power RRAM for Stateful Hyperdimensional Computing

In this study, we demonstrate a highly compact 1T1R memory cell comprised of HfO
2
-based Resistive RAM and Poly-Si junctionless nanowire FET selector. Transistor technology used is fully CMOS compatible and RRAM cells are integrated directly inside the drain contact with doped-Si bottom electrode. Our cells show excellent bipolar switching properties and low operating conditions (lower than
$5\mu \mathrm{A}$
at +/− 1.5V). These properties are then exploited to build a massively parallel processing of multiplication, addition, and shift (MAP) operations used for in-memory hyperdimensional computing thanks to accurate stateful logic kernels (>97% precision).