A Kinetic Monte Carlo Simulation Study of WS2RRAM with Different 2D Layer Thickness

A 2D RRAM made by WS2 with different active layer thickness has been studied including experiments and simulations. The physical parameters in the KMC model have been obtained through data calibration. The model has prediction power for I-V characteristics, retention time, and breakdown electric field for a WS2 RRAM with different 2D layer thickness. This work reveals fundamental differences between a 2D RRAM and a conventional oxide RRAM.