Solution Processed Active Materials for Pixel Sensor Element and Integrated Circuits

We describe an integrated planar circuit for an active pixel sensor consisting of a metal-semiconductor-metal (MSM) photodetector with hybrid perovskite as the semiconductor and organic field effect transistors (OFETs) as a readout circuitry. The adopted fabrication approach reduces the complexity of implementing these circuits over a large area, for a variety of substrates from flexible to rigid ones. The features of this circuit include low threshold voltage and a reasonable switching speed of
$\approx 100~\mu \text{s}$
. The achievable channel length of
$\approx 2.5~\mu \text{m}$
for both the photodetector element and OFETs, implies the possibility of high pixel density for imaging applications.