Packaging and Characterization of an Ultra Compact 1200V PCB SiC MOSFET Half-Bridge Module

This paper introduces the packaging and characterization of a novel die-integrated PCB SiC MOSFET half-bridge module. Due to the use of standard PCB technology, the proposed module is manufacturing-friendly and very cost-effective. Two 1.2 kV SiC MOSFET dies are fully embedded, resulting in over 95% size reduction compared to the state-of-the-art half-bridge module with the same voltage rating. The weight of the power module is reduced by 90% to only 0.06 oz. The power loop inductance is optimized and minimized to 2.3 nH while the gate loop inductance drops to 3.8 nH. Copper filling via PCB is further utilized to reduce thermal resistance. The thermal and electric performance of the developed module is presented in the paper. The insulation capability is also verified to be two times higher than the rated voltage.