Hot Carrier Degradation Accompanied by Recovery in InSnZnO Thin-Film Transistors

In this letter, the reliability of InSnZnO thin-film transistors (TFTs) under hot carrier (HC) stress is systematically studied. HC degradation accompanied by recovery is observed for the first time in InSnZnO TFTs. The acceptor-like trap state generation and electron trapping into gate insulator (GI) jointly degenerate the device, and electron detrapping from GI and hole injection into GI jointly recover the device meanwhile. The self-weakening of HC effect with stress time and the vertical electric field enhancement jointly trigger the domination of the recovery effect.