VI-characteristics and transient analysis of an EEPROM device

EEPROM (Electrically Erasable Programmable Read-Only Memory) devices are the basic building blocks of modern non-volatile memories. Today, EEPROM chips are a crucial type of storage for computers and mobile devices. This research study uses COMSOL Multiphysics software to create a single-cell floating gate EEPROM device and its current and charge properties are then calculated. A stationary analysis calculates the device's current-voltage response for both a charged and uncharged floating gate. Then, using time-based studies, a simulation is done to see how transient voltage pulses affect the control gate. These simulations were carried out to demonstrate the operation and effectiveness of the system. So, the EEPROM device model created in this study may act effectively as a storage tube through the tunnel oxide layer, offering greater storage functionalities, improved work efficiency, and reduced power consumption.