Ionizing radiation effects on HgCdTe MIS devices

Total-dose irradiations of HgCeTe MIS capacitors containing an anodic-sulfide interface passivation layer reveal electron and hole trapping in the insulator and irradiation-bias dependences of flatband voltage shift, interface trap density, surface generation velocity, and storage time. Under positive irradiation bias, charge buildup in the insulator is dominated by trapped holes. Isochronal annealing studies reveal nearly complete recovery of the flatband voltage at approximately 275 K for an irradiation to 10/sup 5/ rad(Si) at approximately 80 K. Significant neutralization of trapped holes is evident if the applied bias is changed during irradiation.<
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