Understanding Power Mosfet Switching Performance

A simple analytical technique for predicting the switching performance of the power MOSFET is presented. Closed-form solutions for the gate voltage, drain current, and drain voltage during the switching interval, in terms of each of the relevant device and circuit parameters, are derived. A specific design example is considered, in which the effects are demonstrated of the drive circuit resistance, drain circuit inductance, and drive voltage, on the switching time and switching energy.