2500 Volts 50 MM Asymmetrical Thyristor

A high power asymmetrical thyristor was designed with an N⁺PINP⁺ structure for which the forward blocking voltage was much higher than the reverse blocking voltage. The gate was an amplified, interdigitated design to reduce the turn-on loss. The basic silicon element was fabricated by a combination of ion implantation and diffusion. Twenty-five hundred volt, 50 mm asymmetric thyristors were fabricated and evaluated.