Dynamic SIMS analytical methods for optimized detection limits of atmospheric species

Information on hydrogen, carbon and oxygen impurities introduced during processing and/or aging is of major importance to better understand the lifetime and failure modes of semiconductor devices. Dynamic SIMS plays an important role in evaluating the concentration of impurities (H, C, O) in semiconductor materials because of its high sensitivity, ability for depth profiling at high throughput, and good detection limits. Based on a magnetic sector mass spectrometer, the CAMECA IMS 7f-Auto is a versatile magnetic sector SIMS that offers unequalled depth profiling performance. Data obtained on this instrument show that the detection limits of atmospheric species in silicon can be significantly improved using a specific protocol including sample outgassing and pre-sputtering prior to analysis.