Cryogenic Endurance of Anti-ferroelectric and Ferroelectric $\text{Hf}_{1-\mathrm{x}}\text{Zr}_{\mathrm{X}}\mathrm{O}_{2}$ for Quantum Computing Applications

The classical memory device with cryogenic operation is in high demanded for quantum information processing. The cryogenic endurance of anti-ferroelectric (AFE) and ferroelectric (FE)
$\text{Hf}_{1-\mathrm{x}}\text{Zr}_{\mathrm{x}}\mathrm{O}_{2}$
capacitors is investigated for
$\sim 10^{10}$
cycles (80 K). Moreover, the AFE capacitor exhibits a high speed response with ~ 80% normalized switching
$2\mathrm{P}_{\mathrm{r},\text{sw}}$
for
$\mathrm{t}_{\mathrm{p}}= 1\ \mu\mathrm{s}$
compared to ~ 60% for the FE capacitor at 80 K.