Silicon based degradation model for various types of highly integrated MOL resistor devices

An empirical resistor degradation model for various poly silicon and diffusion resistor types is derived from comprehensive silicon data. The power-law exponents imply that these resistor types exhibit degradation behavior typical of sub-diffusion, super-diffusion and normal diffusion, respectively. The degradation kinetic studies and TEM analysis indicate Ni diffusion as a dominant mechanism of the herein observed resistor degradation.