An Analytical Model to Emulate the Biological Synapses Using B or N Substitution Doped Graphene FET With Hysteresis Engineering

An analytical model for boron (B) or nitrogen (N) substitution doped graphene field effect transistor (GFET) with non-zero band gap and interface traps has been proposed to emulate the biological synapses. The synaptic plasticity has been accomplished by utilizing the hysteresis conduction behaviour manifested through channel and gate-insulator interface traps. The proposed metal-insulator-graphene (MIG) equivalent model explicitly captures physical insights of interface traps, which pave a route to establish the trap state time-dependent drain current model. It can be noticed that the B/N doped GFETs exhibit complete evident of OFF regions unlike undoped GFET discloses ambipolar behaviour. Consequently, the fundamental mechanism of learning and memory, denoted as spike time-dependent plasticity (STDP) for B/N doped synaptic GFETs have been enriched significantly by 20 times than the synapse made by undoped GFETs. Therefore, B/N substitution doped GFETs with non-zero band gap make it highly beneficial in dynamic mimicking of biologically plausible synaptic plasticity.