Low-field electron transport study of III-V type-II superlattices

Type-II superlattice (T2SL) has the ability to operate at high temperatures and overcome the drawbacks of mercury cadmium telluride (MCT or HgCdTe), which has been the most widely used detector, in terms of size, range, resolution, weight, and power consumption. Third-generation detectors with a wide range of applications are frequently designed using T2SLs based on InAs/GaSb. An extensive analysis of the semi-classical transport model derived from the Boltzmann transport equation (BTE) is presented in this research. To describe the electron transport properties of 8ML/8ML InAs/GaSb T2SL, we employ Rode's algorithm, which explicitly addresses relevant physical aspects such as elastic and inelastic scattering mechanisms. We calculate the electron drift mobility and conductivity in conjunction with the k.p band structure model. Ionized impurity (II), piezoelectric (PZ), polar optical phonon (POP), acoustic deformation potential (ADP), and interface roughness scattering (IRS) are five scattering processes that are included in our study. In relation to temperature, structural parameters, and the concentration of carriers, the estimated mobilities and conductivities display a variety of behavior.