Write Recovery Time Degradation by Thermal Neutrons in DDR4 DRAM Components

In this study, a thermal neutron (TN) radiation test was conducted for DRAM devices of ly nm technology. Accordingly, the write recovery time (tWR) degradation was observed to range from 1-ns (degradation) to more than 15 ns (failure). Specifically, permanent timing degradation is expected, owing to secondary particles generated from the interactions of
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B and TN. The samples from two manufacturers were compared and exhibited an 8.9 times maximum difference in the degradation cross-section.