Extremely Scaled Silicon Nanosheet Transistors

The nanosheet MOSFETs' architectures are considered to be the most promising candidates for the sub-3/5 nm technology node, owing to their strong immunity to short-channel effects (SCE). In these structures, quantum confinement effects are crucial, and full-band quantum transport simulations are adequate to capture these confinement effects accurately. Here, we assess the performance limit of ultra-scaled Si nanosheet n-MOSFETs through full-band quantum transport simulations. We consider five highly scaled Si nanosheets of different widths (< 3.5 nm) and different thicknesses (<1.5 nm), Also, we scale the gate length down to a few nanometers to study the limiting performance in ultra-scaled devices.