Role of Negative Differential Resistance in Improving Analog Performance of Negative Capacitance FETs

In this work, we discuss the prospects of a negative capacitance field effect transistor for analog applications. In common source amplifier configuration, NCFET evince improved voltage gain as compared to the baseline device. We show that negative differential resistance (NDR), which is undesirable for logic applications, plays a key role in gain enhancement. Other performance metrics like frequency response, cut-off frequency, transconductance efficiency etc. are also studied. Our study shows that NDR may be helpful in realizing short channel analog transistors. Intel's 20nm FinFET transistor is taken as a baseline device and TCAD simulation models are calibrated to match the input and output characteristics. Results of this work can be extended to advanced GAA nanosheet transistors based NCFETs.